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 ZXSC100
SINGLE CELL DC-DC CONVERTER SOLUTION
DESCRIPTION The ZXSC100 series is designed for DC-DC applications where step-up voltage conversion from very low input voltages is required. These applications mainly operate from single nickel cadmium or nickel metal hydride battery cells. The ZXSC100 devices are non-synchronous PFM, DC-DC controller ICs which drive an external transistor. Zetex SuperSOT4TM switching transistors, with saturation resistance as low as 13m, are recommended as the external switching element. These bipolar transistors are the best switching devices available for this type of DC-DC conversion, enabling high efficiency conversion with input voltages down to below 1 volt. The circuit can start up under full load with regulation maintained down to an input voltage of only 0.926 volts. The solution configuration ensures optimum FEATURES * * SuperSOT4TM switching transistor ZXT14N20DX:VCE(sat) 45mV max @ 1A load Efficiency maintained over a wide range of input voltages and load currents 82% efficiency @ VBATT=1V Startup under full load Minimum operating input voltage VBATT=0.926V Adjustable output voltage down to VBATT Quiescent current typically 150A referred to input voltage MSOP8 Package SO8 Package Demonstration boards available
U1
EM VDRIVE ISENSE FB GND BAS RE
VCC
efficiency over a wider range of load currents, several circuit configurations are possible with power dissipation up to 2W. The step up output voltage is easily programmed with external resistors, the non-synchronous architecture and SuperSOT4TM device enabling an output voltage down to the input voltage level. For best performance the ZXSC100 quiescent current is a small 150A ensuring minimum battery drain in no load conditions. For the best in space saving the ZXSC100 is offered in the MSOP8 package, however the devices are also available in SO8 packaging for applications where space saving is not so critical. The IC and discrete combination offers the ultimate cost vs performance solution for single cell DC-DC conversion.
APPLICATIONS(continued) * * * * * Hand Held Instruments Portable Medical Equipment Solar Powered Equipment LED Flashlight LED Backlight
* * * * * * * * * * * * * * * *
TYPICAL APPLICATION CIRCUIT
VBATT
L1
D1
ZHCS2000
3.3V/0.1A
R1 Q1
ZXT14N20DX
R3 C3 C2
APPLICATIONS Cordless Telephones MP3 Players PDA Pagers Battery Backup Supplies Electronic toothbrush GPS Receivers Digital Camera Palmtop Computers
ZXSC100
C1
R2
R4
ISSUE 1 - JANUARY 2001 1
ZXSC100
ABSOLUTE MAXIMUM RATING
Supply Voltage Maximum Voltage Other Pins Power Dissipation MSOP8 SO8 0.3 to 3.5V 0.3 to VCC+0.3V 500mW 780mW Operating Temperature Storage Temperature Junction Temperature 0 to 70C -55 to 125C 150C
ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated) VCC=1.2V, TA = 25C
Symbol I CC I DRIVE V DRIVE V FB V ISENSE T CVISENSE V DREF T CVDREF V CC(SRT) V CC(min) V CC(hys) I FB I ISENSE V O(min) V O(max) Parameter Quiescent current Base drive current V DRIVE o/p voltage Feedback voltage Output current reference voltage I SENSE voltage temp co. Drive current reference voltage V DREF temp co. Startup voltage Minimum operating input voltage Supply start up to shutdown hysteresis Feedback input current I SENSE input current Minimum Output Voltage Maximum Output Voltage ZXT14N20DX as pass element 1 V ISENSE = 0V 3 V CC 20 Any output load 1.01 0.926 Measured with respect to V CC 20 Conditions Not switching V RE = V CC V RE = V CC , I DRIVE = 5mA 5 V CC - 0.17 708 12 730 17.5 0.4 30 1 1.06 0.98 80 100 4 200 5.5 1.1 1 40 752 24 Min Typ 150 Max 200 10 Units A mA V mV mV %/C mV %/C V V mV nA A V V
1
Depends on breakdown voltage of pass device. See ZXT14N20DX data sheet
ISSUE 1 - JANUARY 2001 2
ZXSC100
ELECTRICAL CHARACTERISTICS: AC PARAMETERS2 TEST CONDITIONS (Unless otherwise stated) ) VCC=1.2V, TA = 25C
Symbol T OFF F OSC
2 3
Parameter Discharge Pulse Width Recommended operating frequency 3
Conditions
Min 1.7 3
Typ 4
Max
Units s kHz
200
These parameters guaranteed by Design Operating frequency is application circuit dependant. See applications section
ZXT14N20DX
For the circuits described in the applications section, Zetex ZXT14N20DX is the recommended pass transistor. The following indicates outline data for the ZXT, more detailed information can be found in the Zetex SuperSOT4 data book or at www.zetex.com
ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated).
PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage SYMBOL V (BR)CEO V CE(sat) MIN. 20 TYP. 30 4.5 30 75 6 45 95 MAX. UNIT V mV mV mV CONDITIONS. I C =10mA* I C =0.1A, I B =10mA* I C =1A, I B =10mA* I C =4A, I B =40mA*
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ZHCS2000
For the circuits described in the applications section Zetex ZHCS2000 is the recommended Schottky diode. The following indicates outline data for the ZHCS, more detailed information is available at www.zetex.com
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Forward Voltage Reverse Current Reverse Recovery Time SYMBOL VF IR t rr 5.5 MIN. TYP. MAX. 385 500 300 UNIT mV mV A ns CONDITIONS. I F =1A I F =2A V R =30V Switched from IF = 500mA to IR = 500mA. Measured at IR=50mA
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
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ZXSC100
TYPICAL CHARACTERISTICS
ISSUE 1 - JANUARY 2001 4
ZXSC100
DEVICE DESCRIPTION
The ZXSC100 is non-synchronous PFM, DC-DC controller IC which, when combined with a high performance external transistor, enables the production of a high efficiency boost converter for use in single cell applications. A block diagram is shown for the ZXSC100 in Figure 1. The driver circuit supplies the external switching transistor with a defined current, which is programmed by an external resistor connected between the RE pin and VCC. The internal reference voltage for the circuit is 25mV below VCC. To maximise efficiency the external transistor is switched quickly, typically being forced off within 20ns. In higher power applications more current can be supplied to the switching transistor by using a further external component. The driver transistor in the IC can be bypassed with the addition of a discrete PNP. More information on this circuit configuration can be found in the applications section.
Figure 1 ZXSC100 Block Diagram A shutdown circuit turns the device on or off at VCC=1V with a hysteresis of typically 80mV. At start up, comparator Comp1 turns the driver circuit and therefore the external switching transistor on. This circuit will remain active until the feedback voltage at the pin FB rises above VREF, which is set to 730mV. An external resistive divider on the FB pin sets the output voltage level. Comparator Comp2 forces the driver circuit and the external switching transistor off, if the voltage at ISENSE exceeds 25mV. The voltage at ISENSE is taken from a current sense resistor connected in series with the emitter of the switching transistor. A monostable following the output of Comp2 extends the turn-off time of the output stage by a minimum of 2us. This ensures that there is sufficient time to discharge the inductor coil before the next on period. The AND gate between the monostable and Comp1 output ensures that the switching transistor always remains on until the ISENSE threshold is reached and that the minimum discharge period is always asserted. The pulse width is constant, the pulse frequency varies with the output load.
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ZXSC100
PIN DESCRIPTIONS
Pin No. 1 2 3 Name EM BAS RE Description Emitter of internal drive transistor. Connect to RE in lower power applications. Must be unconnected in higher power applications Not connected in lower power applications. Connect to base of external drive transistor in higher power applications Drive current sense input. Internal threshold voltage set 25mV below V CC . Connected external sense resistor. Connect emitter of external drive transistor in higher power applications Supply voltage, generally NiMH, NiCd single cell Inductor current sense input. Internal threshold voltage set to 25mV. Connect external sense resistor Feedback sense. Internal threshold set to 730mV. Connect external resistive divider to output voltage Ground Drive output for external switching transistor. Connect to base of external switching transistor. Also connect to collector of external drive transistor in higher power applications
VDRIVE GND FB ISENSE
4 5 6 7 8
V CC I SENSE FB G ND V DRIVE
EM BAS RE VCC
1 2 3 4
8 7 6 5
REFERENCE DESIGNS
Three typical DC-DC step-up converter applications for the ZXSC100 are shown. Firstly with a maximum output power of 0.33W, secondly with a maximum output power of 1.0W and finally driving white LED's in a flashlight application.
Low Power Solution (330mW) Efficiency ISSUE 1 - JANUARY 2001 6
ZXSC100
Low power solution, VOUT=3.3V, PL=0.33W
VBATT
L1
D1
ZHCS2000
3.3V/0.1A
R1 Q1 U1
EM BAS RE
VCC
R3 C3 C2
ZXT14N20DX VDRIVE ISENSE FB GND
ZXSC100
C1
R2
R4
Materials list Ref U1 Q1 D1 R1 R2 R3 R4 C1 C2 C3 L1 Value N/A 20V, 13m, 7A 0.5V, 2A 0* 33m 110k 30k 220F 220F 1nF 22H Part Number ZXSC100X8 ZXT14N20DX ZHCS2000 Generic Generic Generic Generic TPSD227M010R0100 TPSD227M010R0100 Generic D01608C-223 D03316P-223 Manufacturer Zetex Plc Zetex Plc Zetex Plc Various Various Various Various AVX AVX Various Coilcraft Comments Single cell converter, MSOP8 Low VCE(sat) NPN, MSOP8 2A Shottky diode 0805 Size 0805 Size 0805 Size 0805 Size Low ESR tantalum capacitor Low ESR tantalum capacitor 0805 Size Low profile SMT
* Note: Refer to External Transistor base drive selection in the Applications Section.
ISSUE 1 - JANUARY 2001 7
ZXSC100
Higher power solution, VOUT=3.3V, PL=1W
VBATT
L1 R1
D1
ZHCS2000
3.3V/0.33A
Q2 Q1 U1
EM BAS RE
VCC
R3
C3
ZXT14N20DX
VDRIVE ISENSE FB GND
C2
ZXSC100
C1
R2
R4
Materials list Ref U1 Q1 Q2 D1 R1 R2 R3 R4 C1 C2 C3 L1 Value N/A 20V, 13m, 7A N/A 0.5V, 2A 3.3* 33m 110k 30k 220F 220F 1nF 22H Part Number ZXSC100X8 ZXT14N20DX 2N2907 ZHCS2000 Generic Generic Generic Generic TPSD227M010R0100 TPSD227M010R0100 Generic D01608C-223 D03316P-223 Manufacturer Zetex Plc Zetex Plc Various Zetex Plc Various Various Various Various AVX AVX Various Coilcraft Comments Single cell converter, MSOP8 Low VCE(SAT) NPN, MSOP8 Small signal transistor 2A Shottky diode 0805 Size 0805 Size 0805 Size 0805 Size Low ESR tantalum capacitor Low ESR tantalum capacitor 0805 Size Low profile SMT
* Note: Refer to External Transistor base drive selection in the Applications Section.
ISSUE 1 - JANUARY 2001 8
ZXSC100
OTHER APPLICATIONS
Driving white LED's in a flashlight application
ZXSC uses the very small MSOP8 package, the pass transistor is SOT23. No capacitors are required as the circuit is stable under all conditions. The inductor recommended is a low cost miniature component. No compromise is made on efficiency however. In a standard configuration efficiency well over 80% can be achieved. With careful inductor selection efficiency over 90% is possible.
D1
WHITE LED
VBATT
L1
100H
Q1 U1
EM BAS RE
VCC
ZXT13N15 VDRIVE ISENSE FB GND
R2
0.22R
ZXSC100
The inherent flexibility of the ZXSC circuit means that parallel or series LEDs can be driven depending on application needs. A simple modification to the application circuit means that the maximum pulse current can be programmed to match the characteristics of the chosen LED load, pulse current in the range 10mA to 3A and beyond can be easily achieved. An application note (AN33) is available describing various circuits for driving white LEDs. This application note includes details of circuits that optimise battery life, maximise brightness and can be constructed for minimal cost. Contact your local Zetex office for further details.
The ZXSC100 solution is ideal for LED lamp driving applications operating from a single cell. In principal conversion from 1.2V to the 3.6V, typically required by white LEDs, is necessary. Load currents in the region of 20mA to 50mA being required for a single LED element. To minimise size, weight and cost, single cell operation is an advantage. The ZXSC is well matched to single cell NiCd and NiMH characteristics. The circuit will turn on at 1.06V, to maximise the life the battery can offer, the converter does not turn off until the battery voltage falls to 0.93V. The circuit itself is very simple, a minimum number of components are used and they are all small size. The
ISSUE 1 - JANUARY 2001 9
ZXSC100
APPLICATIONS INFORMATION
The following section is a design guide for optimum converter performance. Switching transistor selection The choice of switching transistor has a major impact on the DC-DC converter efficiency. For optimum performance, a bipolar transistor with low VCE(SAT) and high gain is required. The majority of losses in the transistor are, `on-state' and can be calculated by using the formula below:
PQ1 =
((IAVxVCE(SAT) ) + ( IBx VBE(SAT) ))xTON (TON + TOFF) )
I PK 2 ZXT14N20DX Saturation Characteristic. External drive transistor selection For higher power applications an external transistor is required to provide the additional base drive current to the main switching transistor. For this, any small signal PNP transistor is sufficient. Please see reference designs for recommended part numbers. Schottky diode selection As with the switching transistor the Schottky rectifier diode has a major impact on the DC-DC converter efficiency. A Schottky diode with a low forward voltage and fast recovery time should be used for this application. The majority of losses in the diode are, `on-state' and can be calculated by using the formula below: PD1 = IAV x VF(MAX) x TDIS (TOn + TOFF ) I PK 2
where IAV =
From the calculations above the impact on converter efficiency can be seen. The Zetex ZXT14N20DX is an ideal choice of transistor, having the lowest saturation voltage in its class. A data sheet for the ZXT14N20DX is available on the Zetex web site or through your local Zetex sales office. Outline information is included in the characteristics section of this data sheet.
where IAV =
ZXT14N20DX Saturation Characteristic.
The diode should be selected so that the maximum forward current is greater or equal to the maximum peak current in the inductor, and the maximum reverse voltage is greater or equal to the output voltage. The Zetex ZHCS2000 meets these needs. A data sheet for the ZHCS2000 is available on the Zetex web site or through your local Zetex sales office. Outline information is included in the characteristics section of this data sheet.
ISSUE 1 - JANUARY 2001 10
ZXSC100
Inductor selection The inductor value must be chosen to satisfy performance, cost and size requirements of the overall solution. For the reference designs we recommend an inductor value of 22H with a core saturation current rating greater than the converter peak current value. Inductor selection has a significant impact on the converter efficiency. For applications where efficiency is critical, a 5% improvement can be achieved with a high performance inductor. This should be selected with a core saturation current rating much higher than the peak current of the converter, say 3 times greater. The resultant reduction in core losses brings about the efficiency improvement. Peak current definition The peak current rating is a design parameter whose value is dependent upon the overall application. For the reference designs, a peak current of 1.2A was chosen to ensure that the converter could provide the required output power. In general, the IPK value must be chosen to ensure that the switching transistor, Q1, is in full saturation with maximum output power conditions, assuming worse-case input voltage and transistor gain under all operating temperature extremes. Once IPK is decided the value of RSENSE can be determined by: RSENSE = VISENSE IPK Figure 3 Discontinuous inductor current Figure 3 shows the discontinuous inductor current and the relationship between output power, TON, TDIS and TOFF.
Output capacitors Output capacitors are a critical choice in the overall performance of the solution. They are required to filter the output and supply load transient currents. There are three parameters which are paramount in the selection of the output capacitors; their capacitance value, IRIPPLE and ESR. The capacitance value is selected to meet the load transient requirements. The capacitors IRIPPLE rating must meet or exceed the current ripple of the solution. The ESR of the output capacitor can also affect loop stability and transient performance. The capacitors selected for the solution, and indicated in the reference designs, are optimised to provide the best overall performance.
Output power definition By making the above assumptions for the inductor and IPK the output power can be determined by: Output Power = where TON = and TDIS = IPK xL (VOUT - VIN) IPK xL VIN (VOUT - VIN) x IPK x TDIS 2 x (TOn + TOFF )
Note: VOUT = output voltage + rectifier diode VF
ISSUE 1 - JANUARY 2001 11
ZXSC100
Input capacitors The input capacitor is chosen for its voltage and RMS current rating. The use of low ESR electrolytic or tantalum capacitors is recommended. Capacitor values for optimum performance are suggested in the reference design section. Also note that the ESR of the input capacitor is effectively in series with the input and hence contributes to efficiency losses in the order of IRMS2 x ESR. Output voltage adjustment The ZXSC100 is an adjustable converter allowing the end user the maximum flexibility in output voltage selection. For adjustable operation a potential divider network is connected as indicated in the diagram. The output voltage is determined by the equation: VOUT= VFB (1 + RA / RB), where VFB=730mV The resistor values, RA and RB, should be maximised to improve efficiency and decrease battery drain. Optimisation can be achieved by providing a minimum current of IFB(MAX)=200nA to the VBATT pin. The output is adjustable from VFB to the (BR)VCEO of the switching transistor, Q1. Note: For the reference designs, RA is assigned the label R3 and RB the label R4.
VOUT
RA
VFB
RB
0V
External Transistor base drive selection Optimisation of the external switching transistor base drive may be necessary for improved efficiency in low power applications. This can be achieved by introducing an external resistor between the supply and the RE pin of the ZXSC100. The resistor value can be determined by: R1 = VDREF IB
ISSUE 1 - JANUARY 2001 12
ZXSC100
Layout issues Layout is critical for the circuit to function optimally in terms of electrical efficiency, thermal considerations and noise. For `step-up converters' there are four main current loops, the input loop, power-switch loop, rectifier loop and output loop. The supply charging the input capacitor forms the input loop. The power-switch loop is defined when Q1 is `on', current flows from the input through the inductor, Q1, RSENSE and to ground. When Q1 is `off', the energy stored in the inductor is transferred to the output capacitor and load via D1, forming the rectifier loop. The output loop is formed by the output capacitor supplying the load when Q1 is switched back off. To optimise for best performance each of these loops should be kept separate from each other and interconnections made with short, thick traces thus minimising parasitic inductance, capacitance and resistance. Also the sense resistor R2 should be connected, with minimum trace length, between emitter lead of Q1 and ground, again minimising stray parasitics. The layout for the 0.33W solution is shown below. Demonstration board A demonstration board for the 0.33W solution, is available upon request. These can be obtained through your local Zetex office or through Zetex web pages. For all reference designs, Gerber files and bill of materials can be supplied.
Actual Size
Top Silk
Drill Holes
Top Copper 0.33W solution demo board layout ISSUE 1 - JANUARY 2001 13
Bottom Copper
ZXSC100
Designing with the ZXSC100.
Introduction This section refers to the ZXSC100, 3.3V/100mA output reference design and demonstrates the dynamic performance of the solution. Main switching waveforms Steady state operation under constant load gives an excellent indication of ZXSC100 performance. Represented in Figure 3. is the main switching waveform, measured at the collector of Q1, indicating the transistor on-state and the diode energy transfer to the output.
Figure 1. ZXSC100 low power solution, 3.3V/100mA output. Efficiency Efficiency is often quoted as one of the key parameters of a DC-DC converter. Not only does it give an instantaneous idea of heat dissipation, but also an idea as to the extent battery life can be extended. Figure 2. Shows the efficiency of the ZXSC100 low power solution. Efficiency v Output current is shown for a 3.3V output at various input voltages.
Figure 3. Switching waveform The peak switching current is derived from the threshold of the ISENSE pin and the sense resistor value (see Applications section for calculations). Figure 4. shows the switching waveform associated with the ISENSE pin
Figure 2. ZXSC100 efficiency v output current
Figure 4. ISENSE threshold
ISSUE 1 - JANUARY 2001 14
ZXSC100
Shown in Figure 5. is the discontinuous inductor current. The ramp-up current stores energy in the inductor. The switching transistor,Q1, is on during this time and has an equivalent current ramp-up, shown in Figure 6. The ramp-down current is associated with the energy being delivered to the output via the Schottky diode, D1. The diode current is equivalent to this ramp-down current and is shown in figure 7.
Figure 7. Diode current (200mA/div)
Figure 5. Inductor current (200mA/div)
Figure 6. Transistor current (200mA/div)
ISSUE 1 - JANUARY 2001 15
ZXSC100
Output Voltage Ripple Output voltage ripple is shown in Figure 8. The circuit is operated with a 1.2V input voltage, 3.3V output voltage and 100mA load current. Output voltage ripple will be dependent, to a large extent, on the output capacitor ESR. (see Applications section for recommended capacitors).
Figure 8. Output voltage ripple for 3.3V/100mA output. Transient response Transient response to step changes in load is a critical feature in many converter circuits. The ZXSC100 operates a pulse by pulse regulation scheme and therefore corrects for changes in the output every pulse cycle, giving excellent response characteristic.
Measurement with a power supply When measuring with a power supply it is important to realise that the impedance is much greater than that of a secondary battery (NiCd or NiMH). To simulate the lower impedance of the battery x10 low ESR 1000uF capacitors where placed in parallel at the input of the c o n v e r te r . A l l th e dy nam i c pe rf orm anc e measurements were taken using this technique.
ISSUE 1 - JANUARY 2001 16
ZXSC100
Supplier Listing
GERMANY Zetex GmbH Munich (49) 894549490 ASIA Zetex Asia Hong Kong (852) 2610 0611 AVX Asia Singapore (65) 258 2833 http://www.avxcorp.com Coilcraft http://www.coilcraft.com San y o E l e c t r o n i c Sanyo Europe Munich Comp. (OS-CON) (49) 89 457693 16 SANYO Electronics Ltd. Hong Kong (852) 21936888 Singapore (65) 281 3226 Japan (81) 720 70 6306 SANYO Electronics Ltd. Forrest City, AR 870 633 5030 San Diego, CA 619 661 6835 Rochelle Pk, NJ 201 843 8100 Semicon UK Ltd (44) 1279 422224 Coilcraft Inc (1) 847 639 6400 Coilcraft Europe (44) 1236 730595 USA Zetex Inc Long Island NY (1) 631 543 7100 AVX USA (1) 843 448 9411 UK Zetex PLC Chadderton, Oldham (44) 161 622 4444 AVX UK (44) 1252 770000
Zetex
http://www.zetex.com AVX
http://www.sanyovideo.com
ISSUE 1 - JANUARY 2001 17
ZXSC100
CONNECTION DIAGRAMS
EM BAS RE VCC
1 2 3 4 8 7 6 5
VDRIVE GND FB ISENSE
MSOP8
DIM Millimetres MIN A A1 B C D e e1 E H L 0.91 0.10 0.25 0.13 2.95 0.65 0.33 2.95 4.78 0.41 0 MAX 1.11 0.20 0.36 0.18 3.05 NOM NOM 3.05 5.03 0.66 6 Inches MIN 0.036 0.004 0.010 0.005 0.116 0.0256 0.0128 0.116 0.188 0.016 0 MAX 0.044 0.008 0.014 0.007 0.120 NOM NOM 0.120 0.198 0.026 6
SO8
DIM Millimetres Min A B C D E F G J K L 4.80 1.27 BSC 0.53 REF 0.36 3.81 1.35 0.10 5.80 0 0.41 0.46 3.99 1.75 0.25 6.20 8 1.27 Max 4.98 Inches Min 0.189 0.05 BSC 0.02 REF 0.014 0.15 0.05 0.004 0.23 0 0.016 0.018 0.157 0.07 0.010 0.24 8 0.050 Max 0.196
ISSUE 1 - JANUARY 2001 18
ZXSC100
ORDERING INFORMATION
DEVICE ZXSC100X8 ZXSC100N8 Package MSOP8 SO8 Partmarking ZXSC100 ZXSC100
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c) Zetex plc 2001 www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JANUARY 2001 20


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